Metal-Organic Vapor Phase Epitaxial Reactor for the Deposition of Infrared Detector Materials

Abstract

A fully automated metalorganic vapor phase epitaxial (MOVPE) system to grow various II-VI semiconductor thin films was acquired and installed at Rensselaer Polytechnic Institute (RPI) during the year 2013. The design and construction of the system was completed in 2012 and the final installation and testing has been carried out during 2013. A set of growth experiments to deposit CdTe and ZnTe thin films on GaAs and Si substrates was carried out to test the system operation. For these test experiments, dimethyl cadmium, diisopropyl tellurium and diethylzinc were used as the Cd, Te and Zn precursors. The system was shown to operate as designed and the plan was to use the system for various thin film deposition. The installed system significantly enhanced the capability of RPI in the area of MOVPE of II-VI materials.

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Document Details

Document Type
Technical Report
Publication Date
Apr 09, 2015
Accession Number
ADA624027

Entities

People

  • Ishwara Bhat

Organizations

  • Rensselaer Polytechnic Institute

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Crystals
  • Detectors
  • Engineering
  • Epitaxial Growth
  • Films
  • Heterojunctions
  • Infrared Detectors
  • Materials
  • Materials Engineering
  • Semiconductors
  • Single Crystals
  • Solar Cells
  • Students
  • Systems Engineering
  • Thin Films
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Aerospace Test and Evaluation
  • Research Science/Academic Research
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems