Conduction- and Valence-Band Energies in Bulk InAs(1-x)Sb(x) and Type II InAs(1-x) Sb(x)/InAs Strained-Layer Superlattices
Abstract
The energy gaps were studied in two types of structures: unrelaxed bulk In- As1-xSbx layers with x = 0.2 to 0.46 grown on metamorphic buffers and type II InAs1-xSbx/InAs strained-layer superlattices (SLS) with x = 0.225 to 0.296 in the temperature range from T = 13 K to 300 K. All structures were grown on GaSb substrates. The longest wavelength of photoluminescence (PL) at low temperatures was observed from bulk InAs0.56Sb0.44 with a peak at 10.3 um and full-width at half-maximum (FWHM) of 11 meV. The PL data for the bulk InAs1-xSbx materials of various compositions imply an energy gap bowing parameter of 0.87 eV. A low-temperature PL peak at 9.1 um with FWHM of 13 meV was observed for InAs0.704Sb0.296/InAs SLS. The PL spectrum of InAs0.775Sb0.225/InAs SLS under pulsed excitation revealed a second peak associated with recombination of electrons in the three-dimensional (3D) continuum with holes in the InAs0.775Sb0.225. This experiment determined the conduction-band offset in the InAs0.775Sb0.225/InAs SLS. The energies of the conduction and valence bands in unstrained InAs1-xSbx and their bowing with respect to the Sb composition are discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 08, 2013
- Accession Number
- ADA625566
Entities
People
- Ding Wang
- Dmitry Donetsky
- G. Kipshidze
- Gregory Belenky
- Harry S. Hier
- L. Shterengas
- Stefan P. Svensson
- Wendy L. Sarney
- Youxi Lin
Organizations
- State University of New York