Electrical Control of Antiferromagnetic Domains in Multiferroic BiFeO3 Films at Room Temperature
Abstract
Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. In this work, we demonstrate the first observation of electrical control of antiferromagnetic domain structure in a single-phase multiferroic material at room temperature. High-resolution images of both antiferromagnetic and ferroelectric domain structures of (001)-oriented multiferroic BiFeO3 films revealed a clear domain correlation, indicating a strong coupling between the two types of order. The ferroelectric structure was measured using piezo force microscopy, whereas X-ray photoemission electron microscopy as well as its temperature dependence was used to detect the antiferromagnetic configuration. Antiferromagnetic domain switching induced by ferroelectric polarization switching was observed, in agreement with theoretical predictions.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 03, 2006
- Accession Number
- ADA631232
Entities
People
- A. Doran
- A. Scholl
- C. B. Eom
- C. Ederer
- F. Zavaliche
- K. Lee
- M. P. Cruz
- Mikayla Barry
- N. A. Spaldin
- R. R. Das :d. M.
- R. Ramesh
- S. H. Baek
- Tianchi Zhao
- Y. H. Chu
Organizations
- University of California, Berkeley