Dwell, Interface Defeat, and Penetration of Long Rods Impacting Silicon Carbide
Abstract
Test data, analyses, and computed results for gold rods impacting silicon carbide targets are presented. This work focuses on the dwell phenomenon exhibited by silicon carbide, but also investigates the penetration response. Experiments are presented for several target configurations including targets that use a small diameter buffer, targets that use a large diameter buffer, and targets that use no buffer. In-depth analyses of the data are presented. A significant finding is the nonlinear penetration velocity that occurs for impact velocities of 800 - 1500 m/s. The results demonstrate the significant effect a buffer has on interface defeat, and demonstrate that silicon carbide can resist extremely large surface stresses (~25 GPa) without the use of any confinement or prestress. Computations are also presented that identify the critical design parameters of the buffer including the effect of buffer geometry and buffer separation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 04, 2009
- Accession Number
- ADA637030
Entities
People
- Charles E. Anderson Jr.
- Dennis L. Orphal
- Matthias Wickert
- Thilo Behner
- Timothy J Holmquist
Organizations
- Southwest Research Institute