Integrated Circuit Electromagnetic Susceptibility Investigation - Phase 2. MOS/Hybrid Study
Abstract
Three major technology areas are available for device selection by military system designers: bipolar, MOS and hybrid. Devices fabricated by these different techniques may exhibit significant differences in the areas of RF susceptibility and eventual catastrophic failure. This report documents a preliminary investigation into the possible differences between similar devices from the MOS and hybrid technology areas in comparison with previous data on bipolar devices. While it is difficult to compare the observed susceptibility and failure modes, it appears that the underlying RF susceptibility mechanism for devices from all three technology areas can be explained by rectification of the RF signal at the device junctions. The rectification site can be a normal device junction, as in hybrid and bipolar devices; a parasitic junction as in MOS, hybrid and bipolar devices; or a protective junction, as in most MOS devices. The circuit reaction to the rectified currents and voltages is different for all three types of devices but can be analyzed using normal circuit theory. The mean power level required for the output voltage to cross the interference threshold level for the 7400 bipolar device, the 4011 CMOS device and the 2002 hybrid device falls within a 10 dB band at all four frequencies for the most susceptible port. The minimum power level required for catastrophic failure for all three devices also falls within a 10 dB band which is generally 30 dB above the minimum interference threshold band.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 09, 1974
- Accession Number
- ADB002281
Entities
Organizations
- McDonnell Douglas