Sputtering Technology for Improved Electron Devices
Abstract
A viable process for multilevel interconnects was developed. Silicon dioxide sputtered at a substrate temperature of 200 C controlled by gallium heat sinking to a heater block, at argon pressure of 5 millitorr, and at a power density of 14 watts/sq. in. was demonstrated to have appropriate etching characteristics and to be virtually free of pinholes. Pure aluminum and 4% copper in aluminum were shown to be compatible with the silicon dioxide process and to give good level-to-level electrical contact at feedthroughs sputter cleaned just prior to the metal deposition. Beryllium oxide was deposited by rf sputtering from a beryllium oxide target and by reactive rf sputtering from a beryllium target using oxygen-argon mixtures. In both cases stress levels in the films deposited were very high, producing pronounced bowing of substrates. Layers on the order of 2 micrometers thick shattered silicon substrates 5 centimeters in diameter and 325 micrometers thick. Reactively sputtered films deposited at about 3000A/hr. while films rf sputtered from a beryllium oxide target deposited at a rate of about 6500A/hr for 500 watts into a 3.5 inch diameter target.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1974
- Accession Number
- ADB002612
Entities
People
- D. H. Grantham
- J. L. Swindal
Organizations
- United Technologies Corporation