Improved CVD Techniques for Depositing Passivation Layers of ICs

Abstract

This report describes the results of studies to increase the understanding of the requirements for successful glass passivation, by chemical vapor deposition (CVD), of metallized silicon planar integrated circuits (ICs) to improve both performance and reliability. The effects of various conditions for low-temperature (350 to 450 C) CVD of phosphosilicate glass (PSG) layers by oxidation of silane plus phosphine were correlated with the physical and chemical properties of deposited films. It is concluded that the important conditions to control are substrate temperature of deposition, oxygen-to-hydride ratio, hydride input, silane-to-phosphine ratio, and nitrogen input.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1975
Accession Number
ADB009740

Entities

People

  • A. Wayne Fisher
  • George L. Schnable
  • Robert B. Comizzoli
  • Werner Kern

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Reactions
  • Chemical Synthesis
  • Chemistry
  • Electrical Properties
  • Electromagnetic Fields
  • Failure Mode And Effect Analysis
  • Material Degradation Processes
  • Materials
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Materials Testing
  • Measurement
  • Refractive Index
  • Semiconductor Devices
  • Semiconductors
  • Test And Evaluation

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.