Ion Implantation of Wide Bandgap Semiconductors

Abstract

The principal dopants studied under this program are sulfur and selenium, both n-type. Topics covered in this report include (1) encapsulation technology, (2) transferability of sulfur or selenium implantation technology, (3) dual implantation of sulfur or selenium with gallium, and (4) thermal conversion of semi-insulating GaAs.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1977
Accession Number
ADB023901

Entities

People

  • C. L. Anderson
  • C. L. Ramiller
  • G. S. Kamath
  • H. L. Dunlap

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Birds
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Coatings
  • Electrical Measurement
  • Electrical Properties
  • Films
  • Ion Implantation
  • Materials
  • Measurement
  • Military Research
  • Silicon Compounds
  • Spectra
  • Test And Evaluation
  • United States

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics