75-GHz SiGe Heterojunction Bipolor Transistors: GaAs Performance in Si Technology?

Abstract

SiGe HBTs have demonstrated new device and circuit records, extending the speed of silicon bipolar devices closer to a regime dominated by GaAs and other compound semiconductor technologies. This paper gives a review of recent results and describes our present understanding in order to address the potential merits of SiGe HBT's as an extension to Si bipolar technology.

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Document Details

Document Type
Technical Report
Publication Date
May 22, 1992
Accession Number
ADP007651

Entities

People

  • B. S. Meyerson
  • E. F. Crabbe
  • G. L. Patton
  • J. H. Comfort
  • J. M. Stork

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accumulators
  • Bipolar Junction Transistors
  • Boltzmann Equation
  • Capacitance
  • Circuits
  • Compound Semiconductors
  • Current Density
  • Digital Circuits
  • Electric Fields
  • Electronics
  • Energy
  • Energy Bands
  • Equations
  • Frequency
  • Low Temperature
  • Semiconductors
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics