High-Performance Thin-Film Transistors Using Ni Silicide for Liquid-Crystal Displays

Abstract

The Ni-silicide of a sheet resistance of 7 Omega/square can be formed at 230 deg C on n(+) a-Si:H and thus can be applied to gate and source/drain contacts for high performance TFTs. Because of its low resistance it is possible to make a self-alignment between gate and source/drain which lead to a coplanar a-Si:H TFT having a low parasitic capacitance between them. The NiSi2 precipitates can be formed on a-Si:H at around 350 deg C and needlelike Si crystallites are grown as a result of the migration of the NiSi2 precipitates though a-Si:H network. Amorphous silicon can be crystallized at 500 deg C in 10 minutes in a modest electric field. The low temperature poly-Si TFT with a field effect mobility of 120 sq cm/Vs has been demonstrated using the low temperature poly-Si.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 2000
Accession Number
ADP011297

Entities

People

  • Jai I. Ryu
  • Jin Jang
  • Kyu S. Cho

Organizations

  • Kyung Hee University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Crystallization
  • Crystals
  • Dielectrics
  • Electric Fields
  • Electrical Properties
  • Films
  • Ions
  • Liquid Crystal Displays
  • Liquid Crystals
  • Low Temperature
  • Materials
  • Mobility
  • Resistance
  • Scattering
  • Thin Film Transistors
  • Thin Films

Fields of Study

  • Materials science

Readers

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  • Semiconductor Device Technology