Field Emission Studies for Microwave and Optical Wave Generation
Abstract
We have proposed hybrid electronics based on solid-state and vacuum electron devices for an application to relatively high power and high efficiency active devices in microwave and optical wave regions. The new electronics provides a bunched electron beam in these frequency regions and a fine beam with an extremely low electron temperature by the combination between field emission and semiconductor technologies. The paper describes the experiments of microwave electron emission from a GaAs field emitter caused by a traveling dipole domain originated by the Gunn effect in the compound semiconductor emitter and resonant tunneling emission from a GaAs/AlAs quantum structure. In addition, the paper describes Smith-Purcell radiation in optical wavelength using a field emitter arrays.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 29, 2000
- Accession Number
- ADP011730
Entities
People
- D. Arslan
- H. Mimura
- K. Okamura
- K. Yokoo
- O. Yilmazoglu
Organizations
- Tohoku University