Raman and Photoluminescence Mapping of Lattice Matched InGaP/GaAs Heterostructures

Abstract

The influence of the substrate on composition and CuPt-type spontaneous order of MOVPE lattice matched InGaP/GaAs layers was studied. The study was carried out by microRaman and microphotoluminescence. The order was determined by the band gap, while the Raman parameters were also contributed by the surface topography that was also related to the type of substrate. The spontaneous order increases with Si-doping of the substrates. Doping the layers with Zn randomises the alloy.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012596

Entities

People

  • C. Pelosi
  • F. Germini
  • G. Attolini
  • O. Martinez
  • P. Fallini

Organizations

  • University of Valladolid

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Band Gaps
  • Bipolar Junction Transistors
  • Diffraction
  • Energy Bands
  • Frequency
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Laser Beams
  • Laser Diodes
  • Lasers
  • Photoluminescence
  • Raman Spectra
  • Raman Spectroscopy
  • Scattering
  • Semiconductors
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology