Radiative Processes in InGaN Quantum Wells
Abstract
Light emission properties of InGaN quantum wells are reviewed and discussed including performance in wide range of temperatures (up to 450 K). The typical anomaly of "blue" temperature induced shift of the luminescence spectral peak is explained in terms of the band tail model. The model is applied to the InGaN active medium in LEDs and in lasers. The tail states are associated with composition variations in the alloy. They seem to be favorable for efficient radiative recombination.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1999
- Accession Number
- ADP012939
Entities
People
- P. G. Eliseev
Organizations
- University of New Mexico